邀請國外學者參加2012T-ESDC研討會並進行演講



圖左至右為Dr. Steven H. Voldman, 柯明道共同主持人, Dr Tan Cher Ming,。



圖左至右為Dr. Steven H. Voldman, Dr Tan Cher Ming, 柯明道共同主持人。

活動時間:2012.11.05~2012.11.07

活動說明:
受邀參加本中心協辦之2012 T-ESDC研討會,並於會中進行演講,之後參訪交通大學生醫電子轉譯研究中心,由中心共同主持人柯明道教授負責接待,並簡報中心研究成果,分享雙方相關研究心得。

Title of Talk:
Latchup:From the Past, the Present, and the Future

Speaker:
Dr. Steven H. Voldman
ESD/Latchup Consulting, Teaching at Dr. Steven H Voldman LLC, and an IEEE Fellow

Biography of Speaker:
Dr. Steven H. Voldman is an IEEE Fellow for “Contributions in ESD protection in CMOS, Silicon On Insulator and Silicon Germanium Technology.” He was the recipient of the ESD Association Outstanding Contribution Award in 2007. He received his B.S. in Eng. Science from Univ. of Buffalo (1979); a first M.S. EE (1981) from Massachusetts Institute of Technology (MIT); a second degree EE Degree (Engineer Degree) from MIT; a MS Eng. Physics (1986) and a Ph.D EE (1991) from Univ. of Vermont under IBM's Resident Study Fellow program.

Dr. Voldman was a member of the semiconductor development of IBM for 25 years. He was a member of the IBM’s Bipolar SRAM, CMOS DRAM, CMOS logic, Silicon on Insulator (SOI), BiCMOS and Silicon Germanium, RF CMOS, RF SOI, smart power technology development and image processing technology teams. In 2007, Voldman joined the Qimonda Corporation as a member of the DRAM development team, and reporting to Qimonda Europe working on 70, 58, 48 and 32 nm CMOS DRAM technologies. He was responsible for ESD technology strategy, ESD and latchup design manuals, and ESD design working on ESD protection in 512 Mb, 1 Gigabit, and 2 Gigabit DRAM products. In 2008, Voldman worked as a full time ESD consultant for Taiwan Semiconductor Manufacturing Corporation (TSMC) supporting ESD and latchup development for 45 nm CMOS technology and a member of the TSMC Standard Cell Development team in Hsinchu, Taiwan. In 2009, Steve became a Senior Principal Engineer working for the Intersil Corporation working on analog, power, and RF applications in RF CMOS, RF Silicon Germanium, and SOI.

Dr. Voldman was chairman of the SEMATECH ESD Working Group, to establish a national strategy for ESD in the United States; this group initiated ESD technology benchmarking strategy, test structures and commercial test system strategy. At SEMATECH, he was responsible for establishing collaboration between the ESD Association and the JEDEC standards development, as well as launching the first TLP standard working group. He is a member of the ESD Association Board of Directors, ESDA Education Committee, as well ESD Standards Chairman for TLP and VF-TLP testing. Dr. Voldman was also the first chairman of the ESDA ESD Technology Roadmap committee and co-established the ESD Technology Roadmap in 2005. In 2005, he was the Subcommittee Chairman for both the Latchup Sub-committee for the International Reliability Physics (IRPS) and the EOS/ESD Symposium, the ESD Chairman for the International Physical and Failure Analysis (IPFA) Symposium, and presently serving on the technical program committees for the Taiwan ESD Conference (T-ESDC) 2010 in Taiwan, and ICSICT 2010 in China. Steve has provided tutorials on ESD, latchup, failure mechanisms, and RF ESD devices to the IRPS, EOS/ESD, T-ESDC, BCTM, IPFA, ASICON (China), and ICSICT (China).

Dr. Voldman is an author of the six books ESD: Physics and Devices, ESD:Circuits and Devices, ESD: Radio Frequency (RF) Technology and Circuits, Latchup, and ESD: Failure Mechanisms and Models, ESD: Design and Synthesis as well as a contributor to the book Silicon Germanium: Technology, Modeling and Design, and a chapter contributor to new text Nanoelectronics: Nanowires, Molecular Electronics, and Nano-devices.

In the ESD Association, Voldman initiated the “ESD on Campus” program which was established to bring ESD lectures and interaction to university faculty and students internationally; the ESD on Campus program has reached over 35 universities in the United States, Singapore, Taiwan, Malaysia, Philippines, Thailand, and China. He also provides tutorials internationally on ESD protection.

Dr. Voldman has written over 150 technical papers between 1982 and 2011. He is a recipient of over 215 issued US patents. Steven Voldman provides tutorials and lectures on inventions, innovations, and patents; and has also founded a limited liability corporation (LLC) consulting business supporting ESD design, teaching, patents and patent litigation. S. Voldman served as the ESD expert witness for Acer vs Hewlett Packard.

Title of Talk:
Physics of Electromigration in Today ULSI Interconnection

Speaker:
Dr Tan Cher Ming
Associate Professor, Past Section Chair of IEEE Singapore

Biography of Speaker:
Dr Tan Cher Ming received his M.A.Sc and Ph.D in Electrical Engineering from the University of Toronto in 1987 and 1992 respectively. He joined Nanyang Technological University (NTU) as faculty member in 1996, after working in industrial for 10 years. He has published more than 200 International Journal and Conference papers, 3 books and 3 book chapters, and holding 5 patents and 1 copyright for software, with 2 other patent applications pending. He is the Director of SIMTech-NTU Joint Lab on Reliability, Deputy Supervisor of Lab Cluster in Circuit and Systems Division.He is Fellow of Singapore Quality Institute, Fellow of Institute of Engineer, Singapore, past section chair of IEEE Singapore, Sr.M IEEE and ASQ, IEEE DL of Electronic Device Society, Founding Chair of IEEE Nanotechnology Chapter, Singapore Section, , Senior Scientist in SIMTech and Faculty Associate of IME. He is also the General Chair of IEEE International Conference on Nanoelectronics 2008, General Co-Chair of International Symposium of Integrated Circuits 2007 and 2009, Founding Chair of IEEE International Conference on Emerging Technologies – Nanoelectronics. He is also the Guest Editor of International J. of Nanotechnology, Microelectronics Reliability and Nano-research Letter. He is in the reviewer board of several International Journals such as Thin Solid Film, Microelectronic Reliability, Microelectronic Engineering etc. He is listed in Marquis Who’s Who in Engineering and Who’s Who in the world.

Dr. Tan’s work includes the numerical modeling of interconnect reliability, reliability physics of solid state devices, testing methodology for solid state devices reliability, failure analysis of solid state failure, and statistical analysis of device and system reliability.